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The RT8207P provides a complete power supply for both DDRII/DDRIII/Low-Power DDRIII/DDRIV/Low-Power DDRIV memory systems. It integrates a synchronous PWM buck controller with a 1.5A sink/source tracking linear regulator and buffered low noise reference. <p align="justify">The PWM controller provides the high efficiency, excellent transient response, and high DC output accuracy needed for stepping down high voltage batteries to generate low voltage chipset RAM supplies in notebook computers. The constant-on-time PWM control scheme handles wide input/output voltage ratios with ease and provides 100ns &quot;instant-on&quot; response to load transients while maintaining a relatively constant switching frequency. </p><p align="justify">The RT8207P achieves high efficiency at a reduced cost by eliminating the current sense resistor found in traditional current mode PWMs. Efficiency is further enhanced by its ability to drive very large synchronous rectifier MOSFETs. The buck conversion allows this device to directly step down high voltage batteries for the highest possible efficiency. </p><p align="justify">The 1.5A sink/source LDO maintains fast transient response, only requiring 20&mu;F of ceramic output capacitance. In addition, the LDO supply input is available externally to significantly reduce the total power losses. The RT8207P supports all of the sleep state controls placing VTT at high-Z in S3 and discharging VDDQ, VTT and VTTREF (soft-off) in S4/S5. </p><p align="justify">The RT8207P has all of the protection features including thermal shutdown and is available in a WQFN-20L 3x3 packages.</p>
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  • PWM 控制器
    ►下桥 RDS(ON) 电流检测,电阻可程序设计电流限制
    ►100ns 快速步阶负载响应
    ►全输入电压/负载范围内的1% VOUT 精度
    ►1.8V(DDRII)、1.5V(DDRIII)固定电压输出或 0.75V~3.3V 可调电压输出
    ►电池电压输入范围: 4.5V~26V
    ►电阻可程序设计工作频率
    ►过压/欠压保护
    ►软启动期间有内部电流脉动限制
    ►具备驱动大功率同步整流 MOSFET 的能力
    ►电源状态指示
  • 1.5A 线性稳压器( VTT ),带缓冲的参考电压( VTTREF )
    ►高达 1.5A 的电流吐纳能力
    ►容许选择外部输入以最小化功率消耗
    ►为 VTT 和 VTTREF 集成分压器追踪 1/2 VDDQ
    ►带缓冲的低噪声 10mA VTTREF 输出
    ►远程电压检测( VTTSNS )
    ►VTTREF 和 VTT 电压精度为 ±20mV
    ►支持 S3 状态下的高阻状态和 S4/S5 状态下的软关断过程
  • 符合 RoHS 规范,不含卤素
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DDRI/II/III/Low-Power DDRIII/DDRIV/Low-Power DDRIV Memory Power Supplies Notebook Computers SSTL18, SSTL15 and HSTL Bus Termination
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