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The RT9612A/B is a high frequency, synchronous rectified, single phase dual MOSFET driver designed to adapt from normal MOSFET driving applications to high performance CPU VR driving capabilities. <p align="justify">The RT9612A/B can be utilized under both V<sub>CC </sub>= 5V or V<sub>CC</sub> = 12V applications. The RT9612A/B also builds in an internal power switch to replace external boot strap diode. The RT9612A/B can support switching frequency efficiently up to 500kHz. The RT9612A/B has the UGATE driving circuit and the LGATE driving circuit for synchronous rectified DC/DC converter applications. The driving rise/fall time capability is designed within 30ns and the shoot through protection mechanism is designed to prevent shoot through of high side and low side power MOSFETs. The RT9612A/B has PWM tri-state shut down function which can force driver output into high impedance. </p><p align="justify">The difference of the RT9612A and the RT9612B is the propagation delay, t<sub>UGATEpdh</sub>. The RT9612B has comparatively large t<sub>UGATEpdh</sub> than RT9612B. Hence, the RT9612A is usually recommended to be utilized in performance oriented applications, such as high power density CPU VR or GPU VR. The RT9612A/B comes in a small footprint with SOP-8, SOP-8 (Exposed Pad) and WDFN-8EL 3x3. </p>
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  • 可驱动两个 N-MOSFET
  • 适性击穿 (Adaptive Shoot-through) 保护
  • 内嵌靴带式二极管
  • 支持高操作频率
  • 快速输出上升时间
  • Tri-State Input for Bridge Shutdown
  • SOP-8、SOP-8 (散热焊盘) 和 8-脚位 WDFN 封装
  • 符合 RoHS 标准及不含卤素
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主板/桌面计算机微处理器核心电源 高频 DC-DC 转换器 大电流、低电压 DC-DC 转换器
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