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RT6551A/B 是 DDR2/DDR3/DDR3L/LPDDR3/DDR4 存储器系统的电源控制器，它将一组同步 Buck PWM 控制器、具有 1.5A 电流吐纳能力的追踪型线性稳压器和具有缓冲输出的低噪声参考源集成在一起。PWM 控制器耗电低，转换效率高，具有卓越的瞬态响应特性和高输出电压精度，可将高输入电压转换为低输出电压，满足笔记本电脑存储器宫殿的需求。它采用固定导通时间控制架构，可以很容易地处理宽输入/输出电压比的状况，对负载瞬变可提供 100ns “即时”处理能力，同时还能保持相对恒定的开关切换工作频率，省略了传统的电流模式控制架构中的电流检测电阻，降低了成本，提高了效率。它具备驱动大型同步整流 MOSFET 的能力，可将电池高电压直接转换为系统需要的低电压，使转换效率达到了最大化。具备 1.5A 电流吐纳能力的 LDO 具有快速瞬态响应能力，仅需使用 10μF 陶瓷输出电容，还容许使用外部输入以容许最大化地减少功率损耗。RT6551A/B 支持所有的休眠状态控制功能，可在 S3 状态下使 VTT 处于高阻状态，可在 S4/S5 状态下对 VDDQ、VTT 和 VTTREF 进行放电操作。RT6551A/B 还具有 OVP、UVP 和热关机保护功能，其封装为 WQFN-20L 3x3。
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<li class="mv5"> PWM 控制器</li><li class="mv5"> 经下桥 R<sub>DS(ON)</sub> 进行电流检测实现可调的电流限制</li><li class="mv5"> 低静态耗电</li><li class="mv5"> 100ns 快速瞬态响应</li><li class="mv5"> 全输入/负载范围内的1% V<sub>VDDQ</sub> 精度</li><li class="mv5"> 输出电压 0.675V~3.3V 可调，满足 DDR2(1.8V)/DDR3(1.5V)/DDR3L(1.35V)/LPDDR3(1.2V)/DDR4(1.2V) 需要</li><li class="mv5"> 4.5V~26V 输入电压范围</li><li class="mv5"> 工作频率电阻可调</li><li class="mv5"> 过压/欠压保护</li><li class="mv5"> 内部电压斜坡软启动</li><li class="mv5"> 驱动大型同步整流 MOSFET</li><li class="mv5"> Power Good 指示</li><li class="mv5"> 1.5A LDO(VTT)/带缓冲参考源（VTTREF）</li><li class="mv5"> 1.5A 吐纳能力</li><li class="mv5"> 容许外接 LDO 输入，优化功率损失</li><li class="mv5"> 仅需 10μF 陶瓷输出电容</li><li class="mv5"> 集成分压器，追踪 1/2 VDDQ</li><li class="mv5"> ±20mV VTTREF/VTT 精度</li><li class="mv5"> 支持高阻（S3）和软关机（S4/S5）</li><li class="mv5"> 符合 RoHS 规范，不含卤素</li>
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<li class="mv5"> DDR2/DDR3/DDR3L/LPDDR3/DDR4 存储器电源供应</li><li class="mv5"> 笔记本电脑</li><li class="mv5"> SSTL18/SSTL15/HSTL 总线终端</li>
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